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光电双基区晶体管(PDUBAT)是一种能产生‘N’型光电负阻特性的新型光电负阻器件。通过对试制出的样管进行测试,发现PDUBAT在无外接电感的情况下即可发生脉冲振荡。脉冲振荡的频率和振幅均受到入射光强度的调制,即随光强的增大,振荡频率增加,振幅减小。最后,对该器件的应用及发展前景进行了讨论。
Photoelectric bistatic transistor (PDUBAT) is a new type of photoconductive negative resistance device capable of producing ’N’ type photo negative resistance. Through the trial production of the test tube and found PDUBAT in the absence of an external inductor can occur pulse oscillation. The frequency and amplitude of pulse oscillation are both modulated by the intensity of incident light. With the increase of light intensity, the oscillation frequency increases and the amplitude decreases. Finally, the application of the device and its development prospects are discussed.