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对太阳能电池板用铸造多晶硅进行了不同温度的退火处理,用光学显微镜、扫描电子显微镜和微波光电导衰减仪等研究了退火温度对多晶硅显微形貌和少子寿命的影响。结果表明,退火温度升高使得位错尺寸不断减小而位错密度不断增大,位错会不断向晶界处富集,且退火温度越高,这种聚集趋势越显著;随着退火温度升高,多晶硅的少子寿命先缩短后延长,退火温度950℃时少子寿命最短。
The polycrystalline silicon for solar panels was annealed at different temperatures. The effect of annealing temperature on the morphology and minority carrier lifetime of polycrystalline silicon was studied by using optical microscope, scanning electron microscope and microwave photoconductive decay meter. The results show that the higher the annealing temperature, the smaller the dislocation size and the higher the dislocation density, the more the dislocations are enriched in the grain boundaries. The higher the annealing temperature, the more obvious the tendency of aggregation is. With the increase of the annealing temperature Increased, the short life of polysilicon shortened after the first extension, the annealing temperature of 950 ℃, the shortest life expectancy.