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热压烧结制备了ＳｉＯ２－ＡＩＮ复合材料，研究了烧结温度、第二相颗粒ＡＩＮ的引入量对ＡＩＮ颗粒补强ＳｉＯ２基复合材料介电性能的影响．结果说明：随着热压温度的提高，复合材料的介电常数增加，介电损耗减少；在一定的热压温度下，复合材料的介电常数和介电损耗随第二相颗粒ＡＩＮ的引入量的增加而增加。１ＭＨｚ时１０ｖｏｌ％ＡＩＮ－ＳｉＯ２复合材料的介电常数和介电损耗分别为４．１和９．０ｘ１０－４。从复合材料的组成和结构角度对以上结果予以解释。
SiO 2 -AIN composites were prepared by hot-pressing sintering. The effects of sintering temperature and the amount of AIN introduced by second-phase particles on the dielectric properties of AIN particles reinforced SiO2-based composites were investigated. The results show that as the hot pressing temperature increases, the dielectric constant of the composites increases and the dielectric loss decreases. At a certain hot pressing temperature, the dielectric constant and dielectric loss of the composites increase with the introduction of AIN Increase in the amount of increase. The dielectric constant and dielectric loss of 10vol% AIN-SiO2 composites at 1MHz were 4.1 and 9.0x10-4, respectively. The above results are explained from the composition and structure of the composite material.