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研究了以工业生产中间产物偏钛酸为原料生产ＰＴＣＲ（正温度系数热敏电阻）的一些问题。其中主要包括偏钛酸作为生产ＰＴＣＲ热敏电阻原料的适宜煅烧温度、原材料的预磨情况等对合成瓷料性能的影响。结果表明：瓷料半导化的条件与偏钛酸的煅烧温度及原料预磨情况密切相关。低于８００℃的一定温度范围内预先对偏钛酸球磨后煅烧或８００℃以上直接煅烧，均可实现瓷料的半导化。
Some problems in the production of PTCR (Positive Temperature Coefficient Thermistor) using the intermediate product of metatitanic acid as a raw material have been studied. Including metatitanic acid as the production of PTCR thermistor raw materials suitable calcination temperature, raw material pre-grinding conditions on the performance of synthetic porcelain. The results show that the conditions of porcelain semiconducting are closely related to the calcination temperature of metatitanic acid and the pre-grinding of raw materials. Less than 800 ℃ within a certain temperature range pre-calcined metatitanic acid ball milling or direct calcination above 800 ℃, can be achieved porcelain semiconducting.