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将磁控管方式溅射用于微波ＥＣＲ等离子体沉积技术。在低气压和低温下沉积了高度Ｃ轴取向的ＺｎＯ薄膜，其膜的沉积速率比普通ＥＣＲ溅射中所得到的速率大得多，并且在Φ１２ｃｍ的膜区域内显示出良好的均匀性。
Magnetron Sputtering for Microwave ECR Plasma Deposition. A ZnO film with a high degree of C-axis orientation deposited at low pressure and low temperature has a much higher rate of film deposition than that obtained in normal ECR sputtering and shows good uniformity over a film area of 12 cm.