论文部分内容阅读
提出了一种可变低k(相对介电常数)介质层(variablelowkdielectriclayer,VLkD)SOI高压器件新结构,该结构的埋层由可变k的不同介质组成.基于电位移连续性原理,利用低k提高埋层纵向电场和器件纵向耐压,并在此基础上提出SOI的介质场增强原理.基于不同k的埋层对表面电场的调制作用,使器件横向耐压提高,并给出VLkDSOI的RESURF判据.借助2D器件仿真研究了击穿特性与VLkDSOI器件结构参数之间的关系.结果表明,对kIL=2,kIH=3·9,漂移区厚2μm,埋层厚1μm的VLkD器件,埋层电场和器件耐压分别达248V/μm和295V,比相同厚度的常规SOI器件的埋层电场和耐压分别提高了93%和64%.
A new structure of variable low k dielectric layer (VLkD) SOI high voltage device is proposed, and the buried layer of the structure is made up of different media with variable k. Based on the principle of electric displacement continuity, k to increase the longitudinal electric field of the buried layer and the longitudinal withstand voltage of the device, and on the basis of which the principle of dielectric field enhancement of SOI is proposed. Based on the modulation effect of the buried layer with different k on the surface electric field, the lateral withstand voltage of the device is improved, RESURF criterion.The relationship between the breakdown characteristics and the structural parameters of VLkDSOI devices was investigated by means of 2D device simulation.The results show that for VLkD devices with kIL = 2, kIH = 3.9, drift region thickness 2μm and buried layer thickness 1μm, Buried electric field and device withstand voltage of 248V / μm and 295V, respectively, than the same thickness of the conventional SOI device buried layer electric field and withstand voltage increased by 93% and 64%.