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本文研究了低能(200～450千电子伏)质子轰击对P型Ph_(0.76)Sn_(0.24)Te的影响。通常发现轰击降低了载流子浓度。观察到自P到n型的载流子电导决定于原来的载流子浓度。原来的空穴浓度为低系数10~(17)厘米~(-3)的样品在质子剂量约为5×10~(13)质子/厘米~2时转变为n型。原来的载流子浓度更高的样品导电类型的转变是不一致的。发现导电类型转变的样品迁移率是增加了。而没有转变的样品稍有降低。对导电类型转变的样品作了等时退火试验。发现主要退火阶段出现在90～140℃,在该温度范围内导电类型转变的样品的电导变回到P型。这似乎限制了质子轰击用作生产可靠器件的方法。
The effect of proton bombardment at low energy (200-450 keV) on P type Ph 0.76 Sn 0.24 Te has been studied in this paper. It is often found that bombardment reduces the carrier concentration. It is observed that the carrier conductance from P to n-type is determined by the original carrier concentration. The original sample with hole concentration 10 ~ (17) cm ~ (-3) decreased to n-type when the proton dose was about 5 × 10 ~ (13) protons / cm ~ The original conductivity of the sample with higher carrier concentration is not consistent. It was found that the mobility of the samples with conductive type transitions increased. Samples that did not change slightly decreased. An isochronal annealing test was performed on samples of the conductivity type. The main anneal phase was found to occur at 90-140 ° C, within which the conductance of the conductivity type transitions changed back to the P-type. This seems to limit the use of proton bombardment as a method of producing reliable devices.