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A high linearity 1.575 GHz SiGe:HBT low noise amplifier(LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 m SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point ofC7:8 dBm and an input third-order intercept point ofC1:8 dBm. The chip occupies a 500 560 m2area and consumes 3.6 mA from a2.85 V power supply.
A high linearity 1.575 GHz SiGe: HBT low noise amplifier (LNA) for global positioning system applications. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 m SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of C7: 8 dBm and an input third -order intercept point ofC1: 8 dBm. The chip occupies a 500 560 m2area and consumes 3.6 mA from a2.85 V power supply.