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本发明是应用在半导体单晶体内扩散电阻的半导体应变计来检测压力的压力传感器。 此种压力传感器,是对n型硅之类半导体的单晶体选择扩散p型电阻,外加压力,使半导体单晶体发生应变,利用压阻效应测出p型电阻元件的电阻变化值,便知外加压力的大小。压力传感器的硅膜片结构如图1(a)和(b)所示。它由硅膜片1和硅座3及金属座4构成。硅膜片1上有对n型硅单晶开槽形成的应变部件11和固定部件12,采用扩散p型杂质法使应变部件11上形成应变电阻21、22、23和24,并
The present invention is a pressure sensor for detecting a pressure using a semiconductor strain gauge having a diffusion resistance in a semiconductor single crystal. Such a pressure sensor is a single-crystal semiconductor such as n-type silicon that diffuses a p-type resistor. When a pressure is applied to the semiconductor single crystal, the resistance of the p-type resistor is measured by a piezoresistive effect. size. The pressure sensor silicon diaphragm structure shown in Figure 1 (a) and (b) below. It consists of a silicon diaphragm 1 and a silicon base 3 and a metal base 4. The silicon diaphragm 1 is provided with a strain member 11 and a fixed member 12 formed by notching an n-type silicon single crystal, and strain resistors 21, 22, 23 and 24 are formed on the strain member 11 by a diffusion p-type impurity method