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应用双晶衍射仪对MOCVD外延生长所得到的一个GaAlInP双异质结(DH)的单晶多层结构进行测试与分析。应用双晶衍射的动力学理论模拟此样品的摇摆曲线,并结合界面的融合、晶格崎变与缺陷的散射来解释测试结果。对衍射谱的展宽提供了合理的解释,比较肯定地确定了此样品的结构与晶体质量。涉及缺陷对衍射FWHM的展宽的解释与关于缺陷的半动力学衍射理论相比,简单明了,实用于实际的生产检测。并根据分析结论对晶体质量的改进提供技术方案,改进了晶体质量。
Single crystal multilayer structure of GaAlInP double heterojunction (DH) obtained by MOCVD epitaxial growth was tested and analyzed by double crystal diffractometer. The kinetic theory of twin crystal diffraction was used to simulate the rocking curve of this sample, and the test results were explained with the interface fusion, lattice distortion and scattering of defects. A reasonable explanation of the broadening of the diffraction spectrum is provided, and the structure and the crystal quality of the sample are definitely confirmed. The explanation of the broadening of the diffraction FWHM involving defects is simple and straightforward and practical in practical production testing as compared to the semi-dynamic diffraction theory of defects. According to the conclusion of the analysis, the crystal quality can be improved by providing a technical solution to the improvement of crystal quality.