利用离子束辅助沉积技术在金刚石薄膜衬底上制备立方氮化硼薄膜,傅立叶变换红外谱的结果表明,在高度(001)织构金刚石薄膜衬底上沉积的立方氮化硼薄膜是纯的立方相,而在多晶金刚石薄膜衬底上制备的立方氮化硼薄膜中还含少量的六角氮化硼。高分辨透射电镜的分析表明,在金刚石晶粒上异质外延的c BN直接成核于金刚石衬底,界面没有六角氮化硼过渡层;而在含有大量缺陷的晶粒边界,存在六角氮化硼的成核与生长。 The cubic boron nitride films were prepared on a diamond film substrate by ion beam assisted deposition. The results of Fourier transform infrared spectroscopy showed that the cubic boron nitride films deposited on the highly (001) textured diamond film substrates were pure cubic Phase, while the polycrystalline diamond film substrate prepared cubic boron nitride film also contains a small amount of hexagonal boron nitride. High-resolution transmission electron microscopy analysis showed that cBN crystallized directly on the diamond substrate with no heteroepitaxy on the diamond grains, and there was no hexagonal boron nitride interfacial layer at the interface. However, at the grain boundaries with a large number of defects, hexagonal nitrides Boron nucleation and growth.