论文部分内容阅读
报道了采用热壁外延 (HWE)技术 ,在Si表面生长GaAs薄膜。先通过活化剂活化Si表面 ,再采取两步生长法外延GaAs单晶薄膜 ,最后进行断续多层循环退火 (IMCA)。经电子探针 (EPMA)、Raman光谱、Hall测量和荧光 (PL)光谱测试分析 ,证实在Si表面获得了近 4 μm厚的GaAs单晶薄膜。
Reported the use of thermal wall epitaxy (HWE) technology, the growth of GaAs film on the Si surface. Activating the Si surface with an activator and then using a two-step epitaxial growth GaAs single crystal thin film, and finally intermittent multi-cycle annealing (IMCA). Electron probe (EPMA), Raman spectroscopy, Hall measurement and fluorescence (PL) spectroscopy test and analysis confirmed that the Si surface obtained nearly 4 μm thick GaAs single crystal thin film.