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分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).首先,根据MIS测试结构等效电路,采用双频C-V特性测试技术对漏电流和衬底电阻的影响进行修正,得出HfO2高k栅介质的准确C-V特性.其次,给出了一种利用平带电容提取高k介质EOT的方法,该方法能克服量子效应所产生的反型层或积累层电容的影响.采用该两步法提取的HfO2高k栅介质EOT与包含量子修正的Poisson方程数值模拟结果对比,误差小于5%,验证了该方法的正确性.
The equivalent oxide thickness (EOT) of HfO2 high-k gate dielectric was extracted in two steps.Firstly, according to MIS test structure equivalent circuit, the influence of leakage current and substrate resistance was corrected by using dual-frequency CV characteristic test technology, HfO2 high-k gate dielectric.Secondly, a method to extract EOT from high-k dielectric by using flat-band capacitors is presented, which can overcome the influence of the inversion layer or accumulation layer capacitance caused by quantum effect.Using this method, Compared with the numerical simulation results of quantum correction Poisson equation, the error of EOT extracted by two-step HfO2 high-k dielectric is less than 5%, which proves the correctness of the proposed method.