研究了低温(1·5K)和强磁场(0—13T)条件下,InP基In0·53Ga0·47As/In0·52Al0·48As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE21=kωc(其中k为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE21=(2k+1)ωc/2,填充因子出现奇数. The change law of the fill factor with the magnetic field in the InP-based In0.53Ga0.47As / In0.52Al0.48As quantum well occupying two sub-bands under the condition of low temperature (1.5 K) and high magnetic field (0-13T) It is shown that if the splitting energy of the electron spin is much less than that of the Landau level, ΔE21 = kωc (where k is an integer) if the splitting energies of two subbands are integral multiples of the Rayleigh splitting energy, and the filling factor is an even number ; When the two subband splitting energies are half odd multiple of Landau’s splitting energy, that is, ΔE21 = (2k + 1) ωc / 2, the filling factor is odd.