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本文介绍了一种工作频率在1.8GHz,采用DGS微带线实现的10dB90° branchline功率耦合器。DGS是缺陷地结构的简称,由在微带线下的地线层蚀刻周期结构构成。由于DGS使微带线的有效介电常数增加,相同宽度下DGS微带线具有更高的特征阻抗。以RT/Duroid 5880基板材料为例(介电常数2.2,厚度31mils),使用DGS结构微带线实现150Ω特征阻抗需要1mm线宽,而传统微带线以同样的线宽只能实现82Ω特征阻抗。我们采用150Ω的DGS微带线构成10dB功率耦合器,测量结果与仿真预测有很好的吻合。
This article describes a 10dB90 ° branchline power coupler with a 1.8GHz DGS microstrip line. DGS is short for the structure of defects, by the periodic structure of the ground layer under the microstrip line etching composition. Since DGS increases the effective dielectric constant of the microstrip line, the DGS microstrip line has a higher characteristic impedance at the same width. Taking the RT / Duroid 5880 substrate material as an example (dielectric constant 2.2, thickness 31 mils), a 1-mm linewidth is required to achieve a 150-ohm characteristic impedance using DGS-structured microstrip lines, whereas a conventional microstrip line can only achieve 82-Ω characteristic impedance with the same line width . We use a 150Ω DGS microstrip line to form a 10dB power coupler, the measurement results and simulated predictions are in good agreement.