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测量了７～１０００Ｋ的掺氮６ＨＳｉＣ材料基本电学性质，用电中性方程对载流子浓度温度倒数关系曲线进行拟合，利用化合物半导体散射机构计算了迁移率。数据拟合分析得到样品的掺杂浓度、补偿浓度、杂质激活能和载流子有效质量。分析结果表明，控制杂质能级和表观杂质激活能由补偿度和杂质浓度决定。掺氮６ＨＳｉＣ材料预期有００８ｅＶ、０１２ｅＶ两个能级，当补偿杂质浓度大于较小能级浓度时，材料将由较高的能级控制并可由单能级电中性方程描述。迁移率计算结果表明，采用化合物半导体散射机构计算６ＨＳｉＣ迁移率也是适合的。计算给出不同浓度和补偿程度对迁移率与温度关系的影响。
The basic electrical properties of Ni-Si-SiC materials doped with 7 ~ 1000K were measured. The charge-neutral temperature dependence of the carrier concentration temperature was fitted by using the neutrality equation. The mobility of the semiconductor was calculated by using the compound semiconductor scattering mechanism. Data fitting analysis of the sample doping concentration, compensation concentration, impurity activation energy and carrier effective mass. The results show that the controlled impurity level and the apparent activation energy are determined by the degree of compensation and the impurity concentration. Nitrogen-doped 6H-SiC materials are expected to have two levels of 008eV and 012eV. When the compensated impurity concentration is greater than the lower level, the material will be controlled by the higher level and described by the single-level neutral electric equation . The calculation of the mobility shows that it is also suitable to calculate the 6H-SiC mobility using a compound semiconductor scattering mechanism. The effects of different concentrations and degrees of compensation on the relationship between mobility and temperature are given.