论文部分内容阅读
一、引言锗、硅元素半导体在器件制造中已得到了很广泛的应用,在制造高频、大功率、高速开关晶体管方面也取得了非常可观的进展.为进一步改进晶体管的频率、功率、开关速度、使用温度等性能,以及扩展半导体器件的种类和应用,国外对新型半导体材料及其器件的探索相当重视.特别值得提出的是Ⅲ-V族化合物半导体及其器件.1952年Welker就已开始了Ⅲ-V族化合物半导体的研究,他指出这种化合物半导体有类似于锗、硅等Ⅳ族元素半导体的特性.十余年来,国外对这种半导体进行了许多研究工作,利用这种
I. INTRODUCTION Germanium and silicon element semiconductors have been widely used in device manufacturing and have made considerable progress in the manufacture of high frequency, high power and high speed switching transistors. In order to further improve the transistor frequency, power, switching Speed, temperature and other properties, as well as the expansion of the types and applications of semiconductor devices, foreign countries for the exploration of new semiconductor materials and their devices considerable attention .In particular worth mentioning is the group III-V compound semiconductors and their devices .1952 Welker has begun III-V compound semiconductor research, he pointed out that this compound semiconductor has similar characteristics of germanium, silicon and other Group IV element semiconductors .For more than ten years, a lot of foreign research on this semiconductor, the use of this