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采用等离子化学气相淀积方法 ,改变 Si H4 和 N2 O的流量比制备含有不同氧浓度的 a- Si∶ H,O薄膜 .用离子注入方法掺入铒 ,经 30 0— 935℃快速热退火 ,在波长 1 .54μm处观察到很强的室温光致发光 .氧的加入可以大大提高铒离子的发光强度 ,并且发光强度随氧含量的变化有一个类似于高斯曲线的分布关系 ,不是单调地随氧含量的增加而增强 .研究了掺铒 a- Si∶ H,O薄膜和微结构 ,讨论了发光强度与薄膜微结构的关系 .
By using the plasma chemical vapor deposition method, the a-Si: H, O thin films with different oxygen concentrations were prepared by changing the flow ratio of Si H 4 to N 2 O. The erbium was doped by ion implantation and rapidly annealed at 30 0- 935 ° C., Very strong room temperature photoluminescence was observed at a wavelength of 1.54μm.The addition of oxygen could greatly increase the luminescence intensity of erbium ion and the luminescence intensity had a Gaussian curve similar to the variation of oxygen content and was not monotonically Oxygen content increased.A erbium-doped a-Si: H, O thin films and microstructures were studied, and the relationship between the luminescence intensity and the microstructure of the films was discussed.