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Tio2(001) surface of rutile TiO2 single crystals was studied by surface photovoltage spectrum (SPS) and electrical field-induced surface photovoltage spectrum (EFISPS)techni(lue. The two SPS responses peak at 360 nm and 410 nm were identified as direct transition and indirect transition of TiO2(001) plane, respectively. And it was found that the indirect transition of TiO2 was very sensitive to the external electrical field. These results indicate that SPS and EFlSPS are effective means to study the opto-electrical characteristics ofsemico nd uctors.
Tio2 (001) surface of rutile TiO2 single crystals was studied by surface photovoltage spectrum (SPS) and electrical field-induced surface photovoltage spectrum (EFISPS) techni (lue. The two SPS responses peak at 360 nm and 410 nm were identified as direct transition And it was found that the indirect transition of TiO2 was very sensitive to the external electrical field. These results indicate that SPS and EF1SPS are effective means to study the opto-electrical characteristics ofsemico nd uctors.