论文部分内容阅读
利用俄歇谱仪(AES),采用氩离子溅射剥离的方法对不掺杂和掺杂钽片的阳极氧化膜进行了纵向分析。发现:掺杂剂中的磷原子确实进入到阳极氧化膜内。假设进入氧化膜内的掺杂剂中的磷原子作为杂质中心存在,在强电场作用下电离而释放出电子。根据钽阳极氧化膜的Albella雪崩模型,导出了V_B=B-blnc-alnA。实验证明上述假设是合理的。
The anodized films of undoped and doped tantalum films were longitudinally analyzed by Auger spectroscopy (AES) using argon ion sputtering. It was found that the phosphorus atoms in the dopant do indeed enter the anodic oxide film. It is assumed that the phosphorus atom in the dopant that enters the oxide film exists as an impurity center and is ionized by a strong electric field to release electrons. V_B = B-blnc-alnA was derived from the Albella avalanche model for tantalum anodized films. Experiments show that the above assumption is reasonable.