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实验上比较了808nm和888nm波长半导体激光器抽运时,Nd:YVO4内腔倍频单频激光器的最高输出功率和光-光转换效率,以及Nd:YVO4晶体热效应的差异。结果表明,888nm直接抽运是提升高功率激光器性能的有效途径。鉴于888nm激光抽运时吸收效率和无辐射跃迁过程之间的矛盾,从理论和实验上分析了掺杂浓度对单频激光器性能的影响。理论和实验结果均表明,采用掺杂浓度为0.8%(原子数分数)的Nd:YVO4晶体是实现高功率单频Nd:YVO4激光器的最佳选择。最终,通过采用888nm波长半导体激光器抽运掺杂浓度为0.8%的Nd:YVO4增益介质,实现了最高功率为21.5W的532nm单频激光输出,光-光转换效率为31.6%。
The maximum output power and the light-to-light conversion efficiency of the Nd: YVO4 single-frequency double-frequency laser and the difference of the thermal effects of the Nd: YVO4 crystal were compared experimentally when the 808nm and 888nm wavelength laser diodes were pumped. The results show that 888nm direct pumping is an effective way to improve the performance of high power laser. In view of the contradiction between absorption efficiency and non-radiative transition process of 888nm laser pumping, the influence of doping concentration on the performance of single-frequency laser is theoretically and experimentally analyzed. Both theoretical and experimental results show that the Nd: YVO4 crystal with doping concentration of 0.8% (atomic fraction) is the best choice to realize high power single frequency Nd: YVO4 laser. Finally, a 532nm single-frequency laser with a maximum power of 21.5W was achieved by pumping a Nd: YVO4 gain medium with a doping concentration of 0.8% with a 888nm wavelength semiconductor laser, with a light-to-light conversion efficiency of 31.6%.