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利用电子束蒸镀技术在石英玻璃上沉积SnF_2掺杂SnO_2(FTO)薄膜。研究了不同退火温度对FTO薄膜结构和光电性能的影响。研究结果表明:升高退火温度可促进FTO薄膜中晶粒逐渐变大,结晶度变好,同时薄膜在可见光范围内的透射率随着退火温度升高逐渐增加,吸收边发生蓝移,禁带宽度显著变宽,这是由于载流子浓度增加导致的Moss-Burstein效应。升高温度时,薄膜电学性能随着退火温度升高有了很大改善,700℃退火处理后得到电阻率低至2.74×10~(-3)Ω·cm、载流子浓度为2.09×10~(20) cm~(-3)、迁移率为9.93cm~2·V~(-1)·s~(-1)的FTO薄膜。
Deposition of SnF_2-doped SnO_2 (FTO) thin films on quartz glass by electron beam evaporation. The effects of annealing temperature on the structure and optical properties of FTO films were investigated. The results show that increasing the annealing temperature can increase the grain size and the crystallinity in the FTO thin film. The transmittance of the film in the visible range increases with the increase of the annealing temperature, and the blue shift and the forbidden band The width is significantly widened due to the Moss-Burstein effect due to the increase in carrier concentration. When the temperature is raised, the electrical properties of the films are greatly improved with the increase of the annealing temperature. After annealing at 700 ℃, the resistivity is as low as 2.74 × 10 -3 Ω · cm and the carrier concentration is 2.09 × 10 ~ (20) cm ~ (-3) and mobility of 9.93cm ~ 2 · V ~ (-1) s ~ (-1).