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随着半导体技术的不断发展,新的工艺和技术不断出现,与此同时对新工艺及其结果有足够的认识也是十分必要的。本实验就是基于这一目的,对硅器件工艺中最新采用的液相钝化膜作详细分析,为了对其结构有足够深入的了解,我们同时分析了氧离子注入氧化膜,自然氧化膜,真空室制备的氧化膜,热生长氧化膜及离子溅射氧化膜,以便比较其结构上之差别。结果发现,无论是哪一种氧化膜,其Si—SiO_2界面层都不是单纯的SiO_2,而是SiOx(1≤x≤2)。除液相钝化膜外,其他各种界面过渡层均含Si(e~-O_3)及O_2—Si结构,而且热生长氧化膜和离子溅射氧化膜的过渡层中还存在Si—Si_4原子团。
As the semiconductor technology continues to evolve, new processes and technologies continue to emerge, and at the same time it is essential to have a good understanding of the new process and its results. This experiment is based on this purpose, the latest silicon device technology used in liquid-phase passive film for a detailed analysis, in order to have a deep understanding of its structure, we also analyzed the oxygen ion-implanted oxide film, natural oxide film, vacuum Room to prepare the oxide film, thermal growth oxide film and ion sputtering oxide film, in order to compare the structural differences. As a result, it was found that no matter what kind of oxide film, the Si-SiO 2 interfacial layer is not pure SiO 2 but SiOx (1 ≦ x ≦ 2). In addition to the liquid-phase passive film, other interfacial transitional layers contain Si (e-O_3) and O_2-Si structures, and Si-Si_4 clusters exist in the transition layers of the thermally grown oxide film and the ion- .