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用能量为0.8 MeV的电子对非故意掺杂的GaN材料进行了辐照,光致发光谱(PL谱)表明,辐照使PL谱的强度随电子注量依次降低,且主发光峰蓝移,在注量较高时,在3.36 eV附近,出现新的发光峰。制备了SiN/GaN的MIS结构,并对其进行电子辐照,通过测量C-V曲线计算得到SiN/GaN之间的界面态随着电子辐照注量的增加而增加。制备了GaN基p-i-n结构可见盲正照射紫外探测器并进行电子辐照,测量了辐照前后器件的I-V曲线和光谱响应曲线。实验表明,小注量的电子辐照对器件的反向暗电流影响不大,当电子注量≥5×1016 n/cm2时才使器件的暗电流增大一个数量级。辐照前后器件的光谱响应曲线表明,电子辐照对器件的响应率没有产生明显的影响。利用GaN材料和MIS结构的辐照效应分析了器件的辐照失效机理。
The unintentionally doped GaN material was irradiated by 0.8 MeV electrons. The PL spectrum showed that the intensity of the PL spectrum decreased with the electron fluence and the main emission peak shifted blue , At the higher fluence, near 3.36 eV, a new luminescence peak appears. The MIS structure of SiN / GaN was prepared and irradiated electronically. The measured interfacial states of SiN / GaN increased with the increase of electron irradiation dose. A GaN-based p-i-n structure was fabricated and a blind positive UV detector was exposed to electron irradiation. The I-V curves and spectral response curves of the devices were measured before and after irradiation. Experiments show that the small amount of electron irradiation has little effect on the reverse dark current of the device, and only increases the dark current of the device by an order of magnitude when the electron dose is ≥5 × 1016 n / cm2. The spectral response curves of the devices before and after irradiation show that there is no significant effect of electron irradiation on the device response rate. The radiation failure mechanism of the device was analyzed by using the irradiation effect of GaN material and MIS structure.