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金属氧化物薄膜如HfO_2(被称为高k电介质)是现代微电子器件的关键组件,广泛用于计算机(平板电脑,笔记本电脑和台式机)、智能电话、智能电视、汽车和医疗设备中。具有大介电常数(k)的金属氧化物已经取代了介电常数小的SiO_2(k=3.9),从而使得微电子元件进一步小型化。过渡金属化合物在化学气相沉积(CVD)和原子层沉积(ALD)中被广泛用作前体,通过与O2、H_2O或O_3的反应生成金属氧化物薄膜。微电子金属氧化物膜是纳米材料最广泛应用的一个领域。本文概观该领域的最新进展,包括我们对d0过渡金属配合物与O_2反应的研究。
Metal oxide films such as HfO 2, known as high-k dielectrics, are key components of modern microelectronic devices and are widely used in computers (tablets, laptops and desktops), smartphones, smart TVs, automobiles and medical devices. Metal oxides having a large dielectric constant (k) have replaced SiO 2 (k = 3.9) with a small dielectric constant, thereby further miniaturizing the microelectronic element. Transition metal compounds are widely used as precursors in chemical vapor deposition (CVD) and atomic layer deposition (ALD) to form metal oxide films by reaction with O2, H20 or O3. Microelectronic metal oxide film is one of the most widely used nanomaterials. This article provides an overview of the latest developments in this area, including our research on the reaction of d0 transition metal complexes with O_2.