利用CVD法在玻璃基板上沉积了大面积SnO_2薄膜。薄膜呈粒状结构。测量了掺氟SnO_2的透射率和方块电阻。在300mm×915mm的面积内,方块电阻是均匀的。利用该薄膜作透明电极,制造了大面积非晶硅太阳电池。太阳电池的转换效率、填充因子和开路电压与SnO_2的电阻率有关。 A large area SnO2 thin film was deposited on the glass substrate by the CVD method. The film was granular structure. The transmissivity and sheet resistance of fluorine-doped SnO_2 were measured. In the area of ​​300 mm × 915 mm, the square resistance is uniform. Using the film as a transparent electrode, a large-area amorphous silicon solar cell was manufactured. Solar cell conversion efficiency, fill factor and open circuit voltage are related to the resistivity of SnO 2.