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利用斜光刻技术替代传统的直光刻技术在相同底面积的基础上增大微阵列比表面积制备了高比表面积三维微阵列结构,。首先,利用MATLAB仿真对微阵列排布方式进行分析,确定最佳单个柱体宽度及阵列间距。实验中,采用两次甩胶法将SU-8光刻胶均匀旋涂在2寸硅基底上,甩胶转速设为1500 r/min,旋涂时间设为35 s;分别置于65℃烘台上保持20 min和95℃烘台上保持70 min进行两次前烘处理;随后进行双向斜曝光,微柱宽度为20μm,阵列间距为30μm,光刻角度为20°。最后,再通过高低温后烘处理并显影30 min成功制备出了结构稳定的“X”型三维微阵列结构。
Using the oblique photolithography instead of the traditional direct photolithography technique, a three-dimensional high-surface-area microarray structure was prepared by increasing the specific surface area of the microarray based on the same bottom area. First, the use of MATLAB simulation analysis of the arrangement of microarrays to determine the best single column width and array spacing. In the experiment, SU-8 photoresist was spin-coated on a 2-inch silicon substrate by two times of spinning method. The spinning speed was 1500 r / min and the spin-coating time was 35 s. Pre-baking was performed for 20 min and 95 ° C on a baking stage for 70 min, followed by two-dimensional oblique exposure. The width of the microcolumn was 20 μm, the array pitch was 30 μm, and the photolithographic angle was 20 °. Finally, the structurally stable “X” type three-dimensional microarray structure was successfully prepared by high-low temperature post-baking treatment and development for 30 min.