论文部分内容阅读
为了改善离子微探针质量分析仪的探测灵敏度、精确性及重复性,研究了增加二次离子的数量及降低本底噪声的方法。接着进行了硅片中的杂质(硼、磷、砷及锑)的定量分析。获得了最低的可探测浓度和束径的依赖关系。而且,为了在样品表面上任意所欲的面积上进行分析并改善纵向分析的准确性,研制了一种用一个掩模和高速扫描相结合的新方法,用以确定被分析的面积。对具有非常复杂管芯图形的功率晶体管衬底进行了表面分析,其结果证明这个方法是有效的。
In order to improve the detection sensitivity, accuracy and repeatability of the ion microprobe mass analyzer, the methods to increase the number of secondary ions and reduce the noise floor were studied. Then the quantitative analysis of the impurities (boron, phosphorus, arsenic and antimony) in the silicon wafer was performed. The lowest detectable concentration and bundle diameter dependence was obtained. Also, in order to analyze any desired area on the sample surface and improve the accuracy of the longitudinal analysis, a new method of combining a mask with high-speed scanning was developed to determine the area analyzed. Surface analysis of power transistor substrates with very complex die patterns proved that this method was effective.