一种兼容的双界面修饰被成功应用于修饰有机薄膜晶体管的底接触电极和绝缘层界面。这种兼容的双界面修饰为首先采用4-FTP修饰银源漏电极进而提高其功函数,然后采用HMDS或者OTS进一步修饰二氧化硅绝缘层界面。结果显示场迁移率得到极大提高,其最优特性高达0.91 cm2V-1s-1。 A compatible dual interface modification has been successfully applied to modify the bottom contact electrode and insulating layer interface of organic thin film transistors. This compatible dual-interface modification uses 4-FTP modified silver source and drain electrodes to improve its work function, and then further modifies the silicon dioxide insulator interface using HMDS or OTS. The results show that the mobility of the field is greatly improved, and its optimal characteristic is as high as 0.91 cm2V-1s-1.