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化学机械抛光（ＣＭＰ）设备增势迅猛近来，随着硅片直径的不断增大（＞２００ｍｍ）和图形线宽的急骤缩小（＜０．３５μｍ），ＩＣ加工工艺对圆片的平整度要求越来越高。单一的化学或机械方法抛光的片子很难满足工艺要求，而九十年代兴起的化学机械抛光方法则从加工性能...
Recent advances in chemical mechanical polishing (CMP) devices have led to the demand for flatness of IC wafers as wafer diameters (> 200 mm) and sharp reduction in linewidth (<0.35 μm) The higher A single chemical or mechanical polishing film is difficult to meet the process requirements, and the rise of the nineties chemical mechanical polishing method from the processing performance ...