提出一种采用带 带隧穿热电子注入编程的新型快闪存贮器结构 ,在便携式低功耗的code闪存中有着广泛的应用前景 .该结构采用带 带隧穿热电子注入 (BBHE)进行“写”编程 ,采用源极Fowler Nordheim隧穿机制进行擦除 .研究显示控制栅编程电压为 8V ,漏极漏电流只有 3μA/ μm左右 ,注入系数为 4× 10 -4 ,编程速度可达 16 μs,0 8μm存贮管的读电流可达 6 0 μA/ μm .该新型结构具有高编程速度、低编程电压、低功耗、大读电流和高访问速度等优点 . A new type of flash memory structure with tunneling hot-electron injection programming is proposed, which has a wide range of applications in portable low-power code flash memory. The structure is based on BBHE “Write” programming, using the source Fowler Nordheim tunneling mechanism for erasing.Study shows that the control gate programming voltage of 8V, the drain leakage current of only 3μA / μm, the injection coefficient of 4 × 10 -4, the programming speed of up to 16 μs, 0 8μm memory tube read current up to 60 μA / μm The new structure has the advantages of high programming speed, low programming voltage, low power consumption, high read current and high access speed.