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一、引言 氢化的非晶态硅-碳(a-Si_(1-x)C_x:H)膜,是一种十分重要的非晶态半导体光电材料。由于它具有宽的且可变的带隙,用它作Pin型非晶硅太阳电池的窗口材料,大大地改善了电池P-层的透光性,使电池的光-电转换效率得到了很大的提高,因而已受到人们极大的关注。过去虽有不少作者研究过有关a-Si_(1-x)C_x:H膜的物理特性,但系统地研究从掺硼到掺磷的样品,特
I. Introduction Hydrogenated amorphous silicon-carbon (a-Si_ (1-x) C_x: H) film is a very important amorphous semiconductor photoelectric material. Because of its wide and variable bandgap, it is used as a window material for Pin-type amorphous silicon solar cells, which greatly improves the light transmission of the P- layer of the cell and makes the cell’s light-to-electricity conversion efficiency very high Great improvement, which has been the great concern of people. Although many authors have studied the physical properties of the a-Si_ (1-x) C_x: H films in the past, systematically studying samples doped with boron and phosphorus,