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引言计算技术和集成电路技术的迅速发展,要求并有可能实现半导体随机存贮器朝高密度、低功耗、快速操作方向发展,一般双极电路,由于元件的隔离和实现低功耗所必需的高欧姆值负载电阻,需要占据较大的硅片面积,因此,在功耗和集成度方面都赶不上MOS器件。最近几年迅速发展的双极互补存贮器的特点是少数载流子直接注入。在设计上由于巧妙地运用横向pnp晶体管做负载元件、反向运用的npn晶体管做触发管的合并结构,因此,使双极互补存贮器在功耗和集成度方面可以与MOS存贮相比,而在速度方面却超过普通的MOS存贮器。
Introduction The rapid development of computing technology and integrated circuit technology has required and made it possible to realize high density, low power consumption and fast operation of semiconductor random access memory. In general bipolar circuits, which are required due to isolation of components and low power consumption Of the high ohmic load resistance, need to occupy a larger silicon area, therefore, can not keep up the MOS device in terms of power consumption and integration. The rapid development of bipolar complementary memory in recent years is characterized by the direct injection of minority carriers. In the design due to the clever use of horizontal pnp transistors do load components, the reverse use of npn transistors do trigger the merger structure, so that the bipolar complementary memory in the power consumption and integration can be compared with the MOS storage , But in the speed of more than ordinary MOS memory.