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研究了在GaAs(001)衬底上外延生长的本征ZnTe薄膜样品在氮气氛中450～550℃下的快速退火行为。对于1 min退火的样品,随着退火温度的升高,ZnTe(004)峰双晶X射线(DCXRD)摇摆曲线的半高宽(FWHM)逐渐下降;样品表面粗糙度均方根值(RMS)由退火前的5.3 nm下降至4.7 nm左右。对于450℃退火5 min的样品,其晶体质量与550℃退火1 min的样品相当,但RMS值下降到4.26 nm。ZnTe薄膜表面的In电极之间在未退火时呈高阻状态,在适当条件下退火后In电极之间可以导通,且随着退火温度的降低,所需的退火时间将延长。但550℃退火时In电极的外观形貌发生改变且不能导通。
The rapid annealing behavior of intrinsic ZnTe films grown epitaxially on GaAs (001) substrate at 450-550 ℃ in nitrogen atmosphere was investigated. The FWHM of the rocking curve of ZnTe (004) peak double-crystal X-ray (DCXRD) decreased gradually with the annealing temperature increasing for 1 min annealed samples. The root mean square (RMS) From 5.3 nm before annealing to 4.7 nm or so. For the sample annealed at 450 ℃ for 5 min, the crystal quality is equivalent to that of the sample annealed at 550 ℃ for 1 min, but the RMS value decreases to 4.26 nm. The In electrodes on the surface of the ZnTe thin film are in a high resistance state when not annealed. The In electrodes can be turned on after annealing under suitable conditions, and the annealing time required will be prolonged as the annealing temperature decreases. However, when annealed at 550 ℃, the appearance of In electrode changed and failed to turn on.