GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM).The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence(PL) spectra with proton fluence.It was observed that the surface became a little more rough after irradiation.The Raman spectra indicated that the strain of materials and carrier concentration were not affected by the proton injection.The full-width at half-maximum(FWHM) of E 2 high phonon mode narrowed,which was consistent with the FWHM of PL near-band-edge emission(BE).The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of O N,which may be the main reason for the change of optical properties. GaNs grown by hydride vapor phase epitaxy (HVPE) were irradiated by protons with different fluences. The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy (AFM). The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence (PL) spectra with proton fluence. It was observed that the surface became a little more rough after irradiation. Raman spectra indicated that the strain of materials and carrier concentration were not affected by the The full-width at half-maximum (FWHM) of E 2 high phonon mode narrowed, which was consistent with the FWHM of PL near-band-edge emission (BE). The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of ON, which may be the main reason for the change of optical properties.