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针对传统高压功率器件的击穿电压与比导通电阻始终相互矛盾的问题,提出了一种具有多电极结构的高压SOI LDMOS器件。该结构在漂移区的上方引入多个电极,每个电极偏置在不同的电位,器件正常工作时的电子电流聚集于漂移区表面,提供了一个低阻的导电通道,从而降低了比导通电阻。在漂移区引入多个额外电场峰值,提高了器件的击穿电压。与传统结构相比,新结构能够将击穿电压从325V提高到403V,并且比导通电阻降低43%。
Aiming at the problem that the breakdown voltage and on-resistance of traditional high-voltage power devices are always contradictory, a high-voltage SOI LDMOS device with multi-electrode structure is proposed. The structure introduces a plurality of electrodes above the drift region, each electrode is biased at a different potential, and the electronic current during normal operation of the device collects on the surface of the drift region to provide a low-resistance conductive path, thereby reducing the specific conduction resistance. Introducing multiple extra electric field peaks in the drift region increases the breakdown voltage of the device. Compared with the traditional structure, the new structure can increase the breakdown voltage from 325V to 403V, and reduce the on-resistance by 43%.