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采用金属有机化合物汽相淀积技术生长用于高亮度发光管 (UB-L ED)的 Al Ga In P/Ga As半导体微结构材料 ,突破了材料结构设计和材料生长工艺的关键技术 ,生长出满足于 Cd级的红、橙、黄光 L ED器件的外延材料。
The Al Ga In P / Ga As semiconductor micro-structure material grown by metal organic compound vapor deposition technology for high-brightness light emitting diode (UB-L ED) has broken through the key technologies of material structure design and material growth process to grow To meet the Cd-level red, orange, yellow L ED device epitaxial material.