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设计并研制了一种新型复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT(CC-HEMT)微波单片集成压控振荡器(VCO),且测试了电路的性能。CC-HEMT的栅长为1μm,栅宽为100μm。叉指金属-半导体-金属(MSM)变容二极管被设计用于调谐VCO频率。为提高螺旋电感的Q值,聚酰亚胺介质被插入在电感金属层与外延在蓝宝石上GaN层之间。当CC-HEMT的直流偏置为Vgs=-3V,Vds=6V,变容二极管的调谐电压从5.5V到8.5V时,VCO的频率变化从7.04GHz到7.29GHz,平均输出功率为10dBm,平均功率附加效率为10.4%。当加在变容二极管上电压为6.7V时,测得的相位噪声为-86.25dBc/Hz(在频偏100KHz时)和-108dB/Hz(在频偏1MHz时),这个结果也是整个调谐范围的平均值。据我们所知,这个相位噪声测试结果是文献报道中基于GaN HEMT单片VCO的最好结果。
A new composite channel Al0.3Ga0.7N / Al0.05Ga0.95N / GaN HEMT microwave monolithic integrated voltage controlled oscillator (VCO) was designed and developed. The circuit performance was also tested. The CC-HEMT has a gate length of 1 μm and a gate width of 100 μm. Interdigital metal-semiconductor-metal (MSM) varactors are designed to tune the VCO frequency. In order to increase the Q value of the spiral inductor, a polyimide medium is interposed between the inductor metal layer and the epitaxial GaN layer on the sapphire. When the DC bias of CC-HEMT is Vgs = -3V and Vds = 6V, and the tuning voltage of the varactor is 5.5V to 8.5V, the VCO frequency changes from 7.04GHz to 7.29GHz and the average output power is 10dBm. The mean The power added efficiency is 10.4%. The measured phase noise is -86.25dBc / Hz (at 100KHz offset) and -108dB / Hz (at 1MHz offset) when applied to a varactor with a voltage of 6.7V. This result is also the overall tuning range average of. To our knowledge, this phase noise test result is the best reported in the literature based on a GaN HEMT monolithic VCO.