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利用金属有机物化学气相沉积(MOCVD)方法在c面蓝宝石(α-Al2O3)衬底上外延生长了铝镓铟氮(AlGaInN)四元合金薄膜.合金薄膜的生长温度设置为800,850,900℃,对获得的样品进行对比分析发现:随着生长温度的升高,合金中的In组分单调降低,而Al组分则基本保持恒定.当合金薄膜的生长温度升高到850℃时,薄膜表面开始出现V型缺陷;生长温度进一步升高到900℃时,偏析In原子的脱吸附作用加剧,V型缺陷成核被弱化,使V型缺陷的特征尺寸和分布密度大幅降低.
An AlGaInN quaternary alloy thin film was epitaxially grown on a c-plane sapphire (a-Al 2 O 3) substrate by a metal organic chemical vapor deposition (MOCVD) method. The growth temperature of the alloy thin film was set at 800, 850 and 900 ° C., The results showed that the In composition in the alloy decreases monotonically and the Al composition basically remains constant with the increase of the growth temperature.When the growth temperature of the alloy film increases to 850 ℃, the surface of the film begins to appear V Type defects. When the growth temperature is further increased to 900 ° C, the de-adsorption of segregated In atoms aggravates and the nucleation of the V-type defects is weakened, so that the feature size and distribution density of the V-type defects are greatly reduced.