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本文应用X射线双晶衍射技术结合X射线衍射动力学理论的计算模拟,研究了MBE生长的InGaAs/InAlAs/InP异质结结构材料的外延层生长条件与层厚、成分的关系,X射线双晶衍射形貌图表明:衬底和外延膜存在位错和沉淀物等缺陷,衬底的不完美性直接影响外延膜的质量,文中还应用X射线衍射动力学理论对所观察到的沉淀物衬度进行解释,指出沉淀物周围点阵受张应变场。
In this paper, X-ray double crystal diffraction technology combined with X-ray diffraction kinetic theory calculations to study the MBE growth of InGaAs / InAlAs / InP heterojunction structure of the epitaxial layer growth conditions and layer thickness, composition, X-ray double The crystal diffraction pattern shows that there are defects such as dislocations and precipitates on the substrate and epitaxial film. The imperfections of the substrate directly affect the quality of the epitaxial film. X-ray diffraction kinetic theory is also applied to the observation of the observed precipitates Contrast is explained, which points out that the lattice around the sediment is subjected to tensile strain field.