论文部分内容阅读
本文用导带三能谷模型具体讨论了n-GaAlAs中载流子浓度的温度特n_0(x,T)。分析表明:在较高温区(T>200K)载流子浓度的多谷修正是不可忽视的。用修正后的n_0(x,T)实验数据同非简并统计公式拟合,发现施主电离能有一弱的温度关系,它取决于有关带边的温度系数。观察到较低温区(T<200K)存在着与非简并理论不一致的大残留载流子浓度,这个现象可能同施主络合(DX)中心的低温性质有关。
In this paper, the temperature dependence of the carrier concentration n-0 (x, T) in n-GaAlAs is discussed in detail with the conduction band tri-energy valley model. Analysis shows that: in the higher temperature (T> 200K) carrier concentration of multiple valley correction can not be ignored. Fitting the modified n_0 (x, T) experimental data to the nondegenerate statistical formula, we find that the donor ionization energy has a weak temperature dependence, which depends on the temperature coefficient of the band edge. It is observed that there is a large residual carrier concentration in the lower temperature region (T <200K) which is inconsistent with the non-degenerate theory. This phenomenon may be related to the low temperature nature of the host complex (DX) center.