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闪存不断推动着器件尺寸等比例缩小的进程,高数值孔径浸没式光刻使得45nm及以下技术节点成为可能。一些掩膜参数对于成像性能有很重要的影响,并且曝光前掩膜的空间成像可以用于定义成像质量。
Flash memory continues to drive scaling processes such as device size, and high numerical aperture immersion lithography enables 45nm and below technology nodes. Some mask parameters have a significant impact on imaging performance, and spatial imaging of pre-exposure masks can be used to define imaging quality.