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Ultra-thin-body(UTB) In_(0.53)Ga_(0.47) As-on-insuiator(In_(0.53)Ga_(0.47)As-OI) structures with thicknesses of 8 and15 nm are reahzed by transferring epitaxially grown In_(0.53)Ga_(0.47) As layers to silicon substrates with 15-nmthick Al_2O_3 as a buried oxide by using the direct wafer bonding method.Back gate n-channel metal-oxidesemiconductor Seld-effect transistors(nMOSFETs) are fabricated by using these In_(0.53)Ga_(0.47)As-OI structures with excellent electrical characteristics.Positive bias temperature instability(PBTI) and hot carrier injection(HCI) characterizations are performed for the In_(0.53)Ga_(0.47)As-OI nMOSFETs.It is confirmed that the In_(0.53)Ga_(0.47)As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses.Moreover,the different evolutions of the threshold voltage and the saturation current of the UTB In_(0.53)Ga_(0.47)As-OI nMOSFETs may be due to the slow border traps.
(0.53) Ga_ (0.47) As_OI_uiuiator (In_ (0.53) Ga_ (0.47) As_OI) structures with thicknesses of 8 and 15 nm are reahzed by transferring epitaxially grown In_ (0.53) Ga_ ) Ga_ (0.47) As layers to silicon substrates with 15-nmthick Al_2O_3 as a buried oxide by using the direct wafer bonding method. Gate n-channel metal-oxide semiconductors Seld-effect transistors (nMOSFETs) are fabricated by using these In_ (0.47) As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the In_ (0.53) Ga_ (0.47) As_OI nMOSFETs.It is is that that The In_ (0.53) Ga_ (0.47) As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses. More over, the different evolutions of the threshold voltage and the saturation current of the UTB In_ (0.53) Ga 0.47 As-OI nMOSFETs may be due to the slow border traps.