本文依据拉曼光谱原理,基于Secular方程及拉曼选择定则分别获得了单轴、双轴(001),(101),(111)应变Si材料应变张量与拉曼谱线移动的定量关系,并在此基础上,基于广义胡克定律最终建立了单轴、双轴(001),(101),(111)应变Si材料拉曼谱峰与应力的理论关系模型.该模型建立过程详细、系统,所得结果全面、量化,可为应变Si材料应力的测试分析提供重要理论参考. Based on the Raman spectroscopy, the quantitative relationship between the strain tensor and the movement of Raman spectra of uniaxial and biaxial (001), (101) and (111) strain Si materials was obtained based on Secular equation and Raman selection rule respectively. Based on this, the theoretical model of the relationship between the Raman peaks and stress of uniaxial and biaxial (001), (101) and (111) strained Si materials is established based on the generalized Hooke’s law. The model is established in detail , System, the results obtained are comprehensive and quantitative, which can provide important theoretical reference for testing and analyzing the stress of strained Si material.