论文部分内容阅读
对经不同方式处理的注锌硅样品(注入剂量1×10~(14)-1×10~(17)cm~(-2),注入能量170keV和180keV)的物理行为进行了研究。样品的CWCO_2激光退火和快速淬火处理是在特定的实验条件下进行。分别利用高分辨的背散射-沟道效应和全自动扩展电阻探针进行研究。结果表明,硅中锌主要占据晶格的间隙位置,并且起弱施主作用。CWCO_2激光退火期间锌扩散系数表明,它是一种间隙扩散机理。
The physical behavior of differently-treated zinc-silicon-infused samples (implantation dose of 1 × 10-14 cm -1 × 10-17 cm -2, energy of implantation of 170 keV and 180 keV) was studied. The sample CWCO_2 laser annealing and rapid quenching are carried out under specific experimental conditions. Respectively using high-resolution backscatter-channel effects and fully extended resistance probe study. The results show that zinc mainly occupy the interstitial sites of the lattice and play a weak donor role. The zinc diffusion coefficient during CWCO_2 laser annealing indicates that it is a gap diffusion mechanism.