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VO2 薄膜是非致冷微测辐射热红外探测器热敏电阻材料 .研究中应用微电子工艺制备了VO2 溅射薄膜红外探测器 ,在 2 96K的环境中测试了该探测器在不同的直流偏置、光调制频率下对 873K标准黑体源 8— 12 μm红外辐射的光电响应以及器件的噪声电压 ,在 10和 30Hz的调制频率下其响应率分别大于 17kV/W和接近 10kV/W .该探测器实现了探测率D 大于 1 0× 10 8cmHz/W ,热时间常量为 0 0 11s的 8— 12 μm非致冷红外探测
VO2 thin film is a thermocouple material for uncooled micro-bolometer thermal infrared detector.In this study, a VO2 sputtering thin-film infrared detector was fabricated by using a microelectronic process and tested in a 2 96K environment at different DC bias , The optoelectronic response to 873K blackbody 8-12 μm IR radiation and the noise voltage of the device at the light modulation frequency are greater than 17kV / W and close to 10kV / W at modulation frequencies of 10 and 30Hz, respectively. The detector The 8-12 μm uncooled infrared detection with detection rate D greater than 10 × 10 8 cmHz / W and thermal time constant of 0 0 11 s