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随着半导体技术的发展,ZnO作为第三代半导体材料,具有禁带宽度大、载流子漂移饱和速度高和介电常数小等优点,更适合制作蓝光和紫外光的发光器件。与传统的薄膜制备技术相比,原子层沉积技术(ALD)在膜生长方面具有生长温度低、厚度高度可控、保形性好和均匀性高等优点,逐渐成为制备ZnO薄膜的主流方法。综述了ALD制备ZnO薄膜的反应机制、生长机制和掺杂方面的研究进展,针对当前ZnO薄膜p型掺杂的难点,指出了V族元素中的大半径原子(磷和砷等)掺杂有可能成为制备高质量、可重复和稳定的p型ZnO的潜力研究点,最后总结和展望了ALD制备ZnO薄膜的应用前景和研究趋势。
With the development of semiconductor technology, ZnO, as the third generation of semiconductor material, has the advantages of large forbidden band width, high saturation drift of carrier drift and low dielectric constant, and is more suitable for making blue and ultraviolet light-emitting devices. Compared with the traditional thin film preparation technology, atomic layer deposition (ALD) has the advantages of low growth temperature, highly controllable thickness, good shape retention and high uniformity in the growth of films, and has gradually become the mainstream method for preparing ZnO thin films. The research progress of the reaction mechanism, growth mechanism and doping of ZnO films prepared by ALD is reviewed. In view of the difficulty of p-type doping of ZnO thin films, it is pointed out that the large-radius atoms (phosphorus and arsenic, etc.) It may become a potential research point for preparing high quality, reproducible and stable p-type ZnO. Finally, the application prospects and research trends of ZnO thin films prepared by ALD are summarized and prospected.