针对大面阵CCD成像黑缺陷多的特点,从机理和制作工艺上进行了分析研究。结果表明,CCD成像黑缺陷主要由光刻工艺缺陷引起。光刻LOCOS、地和沟阻工艺中产生的浮胶是CCD成像黑缺陷的主要来源。在制作多晶硅栅过程中,光刻浮胶可产生成像黑缺陷或导致信号电荷转移问题。最后,提出了减少光刻工艺产生浮胶的方法。 According to the characteristics of large area array CCD imaging black defects, the mechanism and manufacturing process are analyzed. The results show that the black defects of CCD image are mainly caused by the defect of photolithography process. Photolithography LOCOS, ground and trench resistance process produced by the floating gel is the main source of CCD imaging black defects. During the fabrication of polysilicon gates, photolithographic floats can create imaging black defects or cause signal charge transfer problems. Finally, a method to reduce the floating glue produced by photolithography is proposed.