采用高真空直流磁控反应溅射成功地在５种基片上制备出多晶择优取向的ＡｌＮ薄膜。结果表明，５种基片均可生长（１００）面择优取向的ＡｌＮ薄膜，并且具有良好的纵向组成均匀性，表面粗造度小，晶粒均匀致密。在金属电极和 Ｓｉ片上沉积的 ＡｌＮ薄膜结晶度、取向性、衍射强度差别较小，两者的结构均优于在盖玻片上沉积的 ＡｌＮ薄膜。 Polycrystalline preferred orientation AlN thin films were successfully prepared on five kinds of substrates by high vacuum DC magnetron reactive sputtering. The results show that AlN film with (100) preferred orientation can be grown on all five kinds of substrates with good longitudinal composition uniformity, small surface roughness and uniform and uniform grains. The differences of crystallinity, orientation and diffraction intensity of AlN films deposited on metal electrodes and Si films are better than that of AlN films deposited on glass coverslips.