自从具有纵向导电结构的MOS场效应管问世以来,MOS场效应管在功率和频率特性方面有了很大的突破。目前功率MOS场效应管所能承受的电压和电流已能与大功率双极型晶体管相提并论。加上功率MOS场效应管本身具有的特色,比如:高输入阻抗、高功率增益、良好的热稳定性以及无二次击穿现象等等。这一系列的优点使得MOS场效应管在射频功率放大、 Since the advent of MOS FETs with vertical conductive structures, MOS FETs have made significant breakthroughs in power and frequency characteristics. The current power MOS FET can withstand the voltage and current has been comparable to high-power bipolar transistors. Coupled with the power MOS FET itself has the characteristics, such as: high input impedance, high power gain, good thermal stability and no secondary breakdown and so on. This series of advantages make the MOS FET in the RF power amplifier,